For a silicon diode with long P and N regions, the accepter and donor impurity concentrations are 1 X 1017 cm-3 and 1X1015 cm-3, respectively. The lifetimes of electrons in P region and holes in N region are both 100 [Math Processing Error]s. The electron and hole diffusion coefficients are 49 cm2/s and 36 cm2/s, respectively. Assume kT/q = 26mV, the intrinsic carrier concentration is 1 X 1010 cm-3 and q = 1.6 X 10-19 C. When a forward voltage of 208 mV is applied across the diode, the hole current density (in nA/cm2) injected from P region to N region is _________.
