In the three dimensional view of a silicon n-channel MOS transistor shown below,
?= 20 nm. The transistor is of width 1 ?m. The depletion width formed at every p-n junction is 10 nm. The relative permittivities of Si and SiO2, respectively, are 11.7 and 3.9, and ?0 = 8.9 × 10-12 F/m.
The gate-source overlap capacitance is approximately
|(A) 0.7 fF||(B) 0.7 pF||(C) 0.35 fF||(D) 0.24 pF|
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